InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier |
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| Authors: | Chihiro J Uchibori Y Ohtani T Oku Naoki Ono Masanori Murakami |
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| Affiliation: | (1) Division of Materials Science ancl Engineering, Department of Engineering Science, Kyoto University, Sakyo-ku, 606 Kyoto, Japan;(2) Mitsui Mining & Smelting Co. LTD., 2081 Karafune, Oaza, Omuta, 836 Fukuoka, Japan;(3) Division of Materials Science and Engineering, Department of Engineering Science, Kyoto University, Sakyo-ku, 606 Kyoto, Japan |
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| Abstract: | Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W2N barrier layer between the Ni layer and W layer. The In0.7Ga0.3 As/Ni/W2N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing
at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C.
The polycrystalline W2N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and
an increase in the total area of the InxGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance. |
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| Keywords: | Diffusion barrier InxGa1− xAs n-type GaAs ohmic contact radio frequency sputtering tungsten nitride |
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