| 一种新型高精度曲率补偿CMOS带隙基准源 |
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| 引用本文： | 周泽坤,明鑫,张波,李肇基. 一种新型高精度曲率补偿CMOS带隙基准源[J]. 半导体学报, 2010, 31(1): 015010-4 |
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| 作者姓名： | 周泽坤 明鑫 张波 李肇基 |
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| 作者单位： | State;Laboratory;Electronic;Thin;Films;Integrated;Devices;University;Electronics;Science;Technology;China; |
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| 摘 要： | 本文提出了一种兼容标准CMOS工艺的高阶曲率补偿带隙基准源。通过利用电压电流转换器和基区-发射区间PN结的电压电流特性，获得正比于VTln(T)的补偿量，从而实现基准源高阶温度补偿。基于CSMC 0.5-μm CMOS工艺进行流片验证，实验结果表明该基准在3.6V电源电压下可以达到3.9 ppm/℃的温度系数，高达72 dB的电源抑制比，并且优于0.304mV/V的线性调整率。电路最大仅消耗42 μA供电电流。
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| 关 键 词： | 带隙基准 曲率补偿 电压电流转换器 CMOS工艺 电源供应器 温度系数 线路调整 高精度 |
| 修稿时间： | 2009-08-26 |
A novel precision curvature-compensated bandgap reference |
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| Zhou Zekun,Ming Xin,Zhang Bo and Li Zhaoji. A novel precision curvature-compensated bandgap reference[J]. Chinese Journal of Semiconductors, 2010, 31(1): 015010-4 |
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| Authors: | Zhou Zekun Ming Xin Zhang Bo Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China |
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| Abstract: | |
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| Keywords: | high-order curvature compensation CMOS bandgap reference temperature coefficient PSRR |
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