| 退火温度对Tb催化GaN纳米棒的影响 |
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| 引用本文： | 陈金华,石鑫,薛成山.退火温度对Tb催化GaN纳米棒的影响[J].微纳电子技术,2009,46(11). |
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| 作者姓名： | 陈金华 石鑫 薛成山 |
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| 作者单位： | 1. 镇江机电高等职业技术学校,信息电子工程系,江苏,镇江,212016
2. 山东师范大学,半导体研究所,济南,250014 |
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| 基金项目： | 国家自然科学基金项目 |
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| 摘 要： | 用稀土金属铽(Tb)作催化剂,通过磁控溅射和退火氨化法成功制备出大量单晶GaN纳米棒,并研究退火温度对GaN纳米棒表面形貌、晶体质量和发光特性的影响。扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光谱(PL)测试结果显示,随着退火温度的升高,纳米棒的直径和长度增大,结晶质量先变好后变差,PL测试发现了位于369nm处的强发光峰和387nm处的弱发光峰,其发光强度随退火温度的升高先增强后减弱,发光峰的位置并不改变,进而得出了制备GaN纳米棒的最佳退火温度为950℃。利用高分辨透射电子显微镜(HRTEM)对950℃下制备的样品进行检测,结果显示样品为六方纤锌矿结构的单晶GaN纳米棒。
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| 关 键 词： | 氮化镓 纳米棒 退火温度 催化剂 晶体生长 |
Effect of Annealing Temperature on Tb-Catalyzed GaN Nanorods |
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| Chen Jinhua,Shi Xin,Xue Chengshan.Effect of Annealing Temperature on Tb-Catalyzed GaN Nanorods[J].Micronanoelectronic Technology,2009,46(11). |
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| Authors: | Chen Jinhua Shi Xin Xue Chengshan |
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| Affiliation: | Chen Jinhua1,Shi Xin1,Xue Chengshan2(1. Department of Information , Electronic Engineering,Zhenjiang Vocational College of Mechanical & Electrical Technology,Zhenjiang 212016,China,2.Institute of Semiconductors,Sh,ong Normal University,Jinan 250014,China) |
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| Abstract: | Large-scale single crystal GaN nanorods were synthesized successfully by magnetron sputtering and anneal amination with rare earth metal Tb as the catalyst.The effects of the annealing temperature on the surface shape,crystal quality and the luminescent characteristic of GaN nanorods were researched.The synthesized samples at different annealing temperatures were characterized by scanning electron microscopy (SEM),X-ray diffraction (XRD) and photoluminescence (PL).The results show that the diameter and leng... |
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| Keywords: | GaN nanorods annealing temperature catalyst crystal growth |
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