Photo response analysis in CCD image sensors with a VOD structure

Photo response in CCD image sensors with Vertical-Overflow-Drain (VOD) was analyzed in an attempt to discover a way to lessen the photo response rise that accompanies increasing incident light intensity in the saturation region. A photo response analysis based on transistor I-V characteristics revealed that the extent of rise in the saturation region is uniquely determined by the non-ideality factor and temperature. Calculation of the non-ideality factor and its dependence on P-well impurity concentration and layer thickness further revealed that fabrication of P-wells with lower impurity concentrations and thicker layers would be effective in suppressing photo response rise