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Enhanced carbon solubility in solvent for SiC rapid solution growth:Thermodynamic evaluation of Cr-Ce-Si-C system
引用本文:Lingling Guo,Guobin Wang,Jiawei Lin,Zhongnan Guo,Zesheng Zhang,Hui Li,Zhanmin Cao,Wenxia Yuan. Enhanced carbon solubility in solvent for SiC rapid solution growth:Thermodynamic evaluation of Cr-Ce-Si-C system[J]. 中国稀土学报(英文版), 2023, 41(8): 1272-1278. DOI: 10.1016/j.jre.2022.08.010
作者姓名:Lingling Guo  Guobin Wang  Jiawei Lin  Zhongnan Guo  Zesheng Zhang  Hui Li  Zhanmin Cao  Wenxia Yuan
作者单位:1. Department of Chemistry,School of Chemistry and Biological Engineering,University of Science and Technology Beijing;2. Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences;3. School of Physical Sciences,University of Chinese Academy of Sciences;4. School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing
基金项目:the National Natural Science Foundation of China (51872028);
摘    要:The carbon dissolution in solvent plays a key role in the process of solution growth route for SiC single crystal,which could determine the growth rate and quality of the products.However,the carbon dissolving ability of binary alloy solvent still needs to be improved.Here,we demonstrate the improved carbon dissolution and enlarged carbon supersaturation in Cr-Ce-Si ternary solvent,showing great potential for SiC solution growth.The phase relations of Cr-Ce-Si-C system were determined by using C...

收稿时间:2022-03-31

Enhanced carbon solubility in solvent for SiC rapid solution growth: Thermodynamic evaluation of Cr–Ce–Si–C system
Affiliation:1. Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083, China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;4. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083, China;1. Technical Research & Development Bureau, Nippon Steel & Sumitomo Metal Corporation, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan;2. Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;1. R&D Partnership for Future Power Electronics Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;2. National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba, Ibaraki 305-8569, Japan;3. Department of Materials Science and Engineering, Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan;4. Department of Applied Chemistry, Tohoku University, Aoba, Sendai, Miyagi 980-8579, Japan;5. Tsukuba Research Laboratory, Hitachi Chemical Co., Ltd., Tsukuba, Ibaraki 300-4247, Japan;1. STR Japan K.K., East Tower 15F, Yokohama Business Park, 134, Goudo-cho, Hodogaya-ku, Yokohama, Kanagawa 240-0005, Japan;2. STR Group-Soft Impact, Ltd., Engels av. 27, 194156 St. Petersburg, Russia;1. Division of Naval Officer Science, Mokpo Maritime University, Mokpo, Jeonnam 58628, South Korea;2. Mokpo National Maritime University, Division of Marine Engineering, Mokpo, South Korea;3. Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553, Japan;4. Center for Energy and Environmental Science, Shinshu University, Wakasato, Nagano 380-8553, Japan;1. National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;2. Nagoya University, Furou-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
Abstract:The carbon dissolution in solvent plays a key role in the process of solution growth route for SiC single crystal, which could determine the growth rate and quality of the products. However, the carbon dissolving ability of binary alloy solvent still needs to be improved. Here, we demonstrate the improved carbon dissolution and enlarged carbon supersaturation in Cr–Ce–Si ternary solvent, showing great potential for SiC solution growth. The phase relations of Cr–Ce–Si–C system were determined by using CALPHAD method based on thermodynamic parameters of CeCr2Si2C. It is indicated that the Cr–Ce–Si ternary solvent shows much larger carbon solubility in temperature range from 1700 to 2000 °C compared to Cr–Si binary one. Furthermore, the carbon supersaturation in solvent is also significantly increased in low temperature range after the addition of Ce, leading to a rapid growth rate. Our work not only demonstrates the feasibility of adding Ce in the alloy solvent for rapid growth of SiC crystal, but also provides an example for investigating the C solubility in ternary solvent.
Keywords:SiC solution growth  Thermodynamic evaluation  Cr–Ce–Si–C system  Carbon solubility
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