低能Ar+刻蚀时间对抛光单晶LiNbO3薄膜忆阻器的影响

调节低能Ar+刻蚀对单晶LiNbO3(LN)的刻蚀时间,制备了不同LN厚度的单晶薄膜忆阻器。利用扫描电子显微镜(SEM)、原子力显微镜(AFM)和电子顺磁共振(EPR)对器件的微观形貌与表面氧空位进行了表征。通过电流-电压曲线(IV曲线)、数据保持特性(Retention)和抗疲劳特性(Endurance)的测试,探究了刻蚀时长对器件电学行为的影响。结果表明,随刻蚀时间增加,器件表面光滑均匀,氧空位浓度增加,电形成电压显著降低。同时,尽管LN薄膜厚度减小后,器件的开关比(On/Off)略有降低,但其具有更好的数据保持特性。该方法适用于对由离子注入剥离法制备的单晶薄膜进行改性,以调控其阻变特性,使之可在高密度存储、神经形态计算等领域得到应用。

The effect of low energy Ar+ etching time on polished single crystal LiNbO3 thin film memristor

The single crystal LiNbO3(LN) memristors of different thicknesses was prepared by adjusting the etching time of low energy Ar+ etching. The scanning electron microscope(SEM), atomic force microscope(AFM), and electron paramagnetic resonance(EPR) were used to characterize the micromorphology and surface oxygen vacancies of the devices. Through the current-voltage curve(IV curve), data retention characteristics(Retention) and fatigue resistance(Endurance) tests, the effect of etching time on the electrical behavior of the device was explored. The results show that with the increase of the etching time, the surface of the device is smooth and uniform, the concentration of oxygen vacancies increases and the electrical forming voltage decreases significantly. Although the On/Off ratio of the device is slightly reduced for thinner LN film, the memristor has better data retention characteristics. This method is suitable for the modification of single crystal film prepared by ion implantation lift-off method to regulate its resistive switching, making it applicable in such fields as high density storage and neuromorphic calculation.