| n-CdSe/Fe(CN)_6~(4~-/3~-)光阳极上的光氧化竞争反应及用L-B技术修饰电极的影响 |
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| 引用本文： | 刘顺林,钱道荪,孙璧媃.n-CdSe/Fe(CN)_6~(4~-/3~-)光阳极上的光氧化竞争反应及用L-B技术修饰电极的影响[J].感光科学与光化学,1990(4). |
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| 作者姓名： | 刘顺林 钱道荪 孙璧媃 |
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| 作者单位： | 上海交通大学应用化学系，上海交通大学应用化学系，上海交通大学应用化学系 上海 200030，上海 200030，上海 200030 |
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| 摘 要： | 用旋转环盘电极研究了还原剂K_4Fe(CN)_6与n-CdSe光阳极上的竞争空穴的氧化反应,证明还原剂捕获光生空穴的途径为直接自价带俘获空穴。又利用L-B技术在n-CdSe电极表面修饰硬脂酸二茂铁酯,结果表明还原剂俘获光生空穴的能力增强,电极的稳定系数提高。
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| 关 键 词： | n-CdSe电极 光电化学 L-B技术 修饰电极 |
THE COMPETITIVE PHOTO-OXIDATION AT n-CdSc/Fe(CN)_6~(4-/3-) PHOTOANODE AND THE INFLUENCES OF MODIFICATION BY L-B TECHNIQUE |
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| LIU SHUN-LIN QIAN DAO-SUN SUN BI-ROU.THE COMPETITIVE PHOTO-OXIDATION AT n-CdSc/Fe(CN)_6~(4-/3-) PHOTOANODE AND THE INFLUENCES OF MODIFICATION BY L-B TECHNIQUE[J].Photographic Science and Photochemistry,1990(4). |
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| Authors: | LIU SHUN-LIN QIAN DAO-SUN SUN BI-ROU |
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| Abstract: | The competitive oxidation reaction of hole between the reducing agent K4Fe(CN)6 and n-CdSe photoanode was studied by RRDE.The results proved that the photogenerated holes are captured directly from the valence band.After modification of ferrocenylene-octadecanoate L-B films,the competitive oxidation effect of reducing agent is enhanced and the stabilization efficiency of the electrode was increased for about 20%. |
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| Keywords: | n-CdSe electrode photoelectrochemistry L-B technique modified electrode |
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