Preparation of P-type indium phosphide films by close space vapor transport

InP films have been grown by close space transport employing 0.8 mol% PCl₃ in H₂. For deposition on InP single crystals, 700C source and 650C substrate temperatures produced epitaxial films on (100), polycrystalline films on (111)A, and powdery layers on (111)B. Growth rates are 6 to 10 |Gmm/hr on (100) InP and ~50 μm/hr on (111)A InP. Regardless of InP source doping, deposits exhibit net donor concentrations of 5×10¹⁷ to 1×10¹⁸cm^?3. Zn doping with 0.02 to 0.5 mol% Zn(C₂H₅)₂ in the gas phase resulted in partially compensated p-InP with net acceptor concentrations up to 7×10¹⁸cm^?3. Polycrystalline films have been grown on Mg-coated carbon or molybdenum substrates at 700C source and 590C substrate temperatures. Growth rates lie between 40 and 50 μm/hr. Substantial recrystallization and grain growth are observed after 2 day anneals at 950C under 5 atm of phosphorus.