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Epitaxial growth of CdS on CuInSe2
Authors:P.W. Li  R.H. Plovnick
Affiliation:3M Central Research Laboratories P. O. Box 33221 St. Paul, Minnesota 55133 USA
Abstract:A single-source, vacuum vapor deposition technique was used to grow epitaxial (0001) CdS films on (112) CuInSe2 single crystal substrates. Highly uniform single crystal CdS films up to 16 μm thick were produced and their quality assessed by x-ray diffraction, scanning electron microscopy, and electrical characterization.
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