| 基于IGBT特性的电路改进 |
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| 引用本文： | 梁中华,李勇,胡庆. 基于IGBT特性的电路改进[J]. 沈阳工业大学学报, 2004, 26(1): 23-25 |
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| 作者姓名： | 梁中华 李勇 胡庆 |
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| 作者单位： | 沈阳工业大学,电气工程学院,辽宁,沈阳,110023 |
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| 摘 要： | 绝缘栅双极晶体管(IGBT)、集成门极换流晶闸管(IGCT)和门极可关断晶闸管(GTO)的特性各不相同，因此对它们的过电流保护方法也不相同．IGCT或GTO的过电流保护一般在主电路中实现，使主电路复杂、成本高、体积大．IGBT的过电流保护一般在自身的驱动电路中实现．而主电路相对简单、体积小．用IGBT改造已有的IGCT或GTO主电路，可使主电路得到简化．减小体积．保证过电流保护的同时，还提高了开关频率，减小了输出谐波．
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| 关 键 词： | 绝缘栅双极晶体管 集成门极换流晶闸管 过流保护 |
| 文章编号： | 1000-1646(2004)01-0023-03 |
| 修稿时间： | 2002-06-13 |
Improvement of circuit based on character of IGBT |
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| LIANG Zhong-hua,LI Yong,HU Qing. Improvement of circuit based on character of IGBT[J]. Journal of Shenyang University of Technology, 2004, 26(1): 23-25 |
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| Authors: | LIANG Zhong-hua LI Yong HU Qing |
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| Abstract: | Insulated gate bipolar transistors (IGBT), integrated gate commutate thyristors (IGCT) and Gate-turn-off thyristors (GTO) have different characteristics,so different methods are adopted for their overcurrecnt protection.For IGCT or GTO, the overcurrent protection is generally implemented in the main circuit, which brings complex main circuit,high cost and great volume.The overcurrent protection for IGBT is generally implemented in its drive circuit so that the main circuit is simpler and the volume is smaller.The existing IGCT or GTO main circuit is reconstructed by IGBT, which can simplify the main circuit and decrease the volume.The switch frequency is increased and the output harmonic is decreased while the overcurrent protection is ensured. |
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| Keywords: | IGBT IGCT protection of overcurrent |
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