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Improved mechanical stability of indium zinc tin oxide based flexible transparent electrode through interlayer treatment |
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| Authors: | Swarup Biswas Yongju Lee Hyowon Jang Selim Han Hyeok Kim |
| Affiliation: | 1. School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, Seoul, Republic of Korea;2. School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, Seoul, Republic of Korea
Contribution: Conceptualization (equal), Data curation (equal), Formal analysis (equal), Investigation (equal), Methodology (equal), Validation (equal), Visualization (equal);3. School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, Seoul, Republic of Korea Contribution: Data curation (supporting), Formal analysis (supporting), Validation (supporting);4. School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, Seoul, Republic of Korea AI Robot R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan, South Korea Contribution: Data curation (supporting), Formal analysis (supporting) |
| Abstract: | Due to the significant growth of the market for numerous flexible electronic devices, demand for mechanically stable indium zinc tin oxide (IZTO) based flexible transparent electrodes has recently expanded substantially. So, we have attempted to increase the mechanical stability of an IZTO based flexible transparent electrode by forming an ultrathin interlayer of an organic semiconductor polystyrene sulfonate doped polyaniline (PANI:PSS). According to the results of the systematic investigation, the PANI:PSS treated IZTO film can preserve 97.50% of its initial average transmittance (AVT) value (83.07%) after 20,000 bending cycles, but the bare IZTO film can retain only 89.00% of its initial AVT value (86.40%) after the same treatment. Furthermore, the PANI:PSS treatment has benefited in the reduction of IZTO film sheet resistance from 17.38 to 16.91 Ω/sq. Scanning electron microscopy images have indicated that the presence of a PANI:PSS interlayer on the IZTO film prevents the formation of fractures on the inorganic IZTO layer when mechanical stress is applied. |
| Keywords: | conducting polymers flexible transparent electrode indium zinc tin oxide interlayer mechanical stability polyaniline: poly (styrenesulfonate) |