Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures |
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| Authors: | A. A. Lebedev M. V. Zamorianskaya S. Yu. Davydov D. A. Kirilenko S. P. Lebedev L. M. Sorokin D. B. Shustov M. P. Scheglov |
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| Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
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| Abstract: | Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition. |
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