Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix |
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Authors: | Ya A Parkhomenko E V Ivanov K D Moiseev |
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Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia
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Abstract: | The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength λ = 3.5 μm, contained a positive-luminescence emission band at 3.8 μm, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface. |
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