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Efficient electro-optic semiconductor medium based on type-II heterostructures |
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| Authors: | V. A. Shchukin N. N. Ledentsov L. Ya. Karachinsky S. A. Blokhin I. I. Novikov N. A. Bogoslovskiy A. V. Savelyev |
| Affiliation: | 1. VI Systems GmbH, D-10623, Berlin, Germany 2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia 3. Saint Petersburg Academic University — Nanotechnology Research and Education Center, Russian Academy of Sciences, ul. Khlopina 8/3, St. Petersburg, 194021, Russia 4. Connector Optics LLC, St. Petersburg, 194292, Russia |
| Abstract: | An electro-optic medium based on the type-II semiconductor superlattice is proposed. Electrooptic modulation of the intensity of optical reflectance of the electro-optic medium integrated into a vertical Fabry-Perot cavity is studied by the optical-reflectance-spectroscopy method. The experimental data are approximated using an oscillator model of exciton absorption. The efficiency of the electro-optic medium in the case of detuning from the absorption peak by 50 meV in electric fields of 0–50 kV/cm is 10?9 m/V at a medium filling factor of 100%. |
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