DSOI总剂量效应模型及背偏调控模型

总剂量辐射效应会导致绝缘体上硅金属氧化物半导体场效应晶体管(DSOI MOSFET)器件的阈值电压漂移、泄漏电流增大等退化特性。由于背栅端口的存在，SOI器件存在新的总剂量效应加固途径，对于全耗尽SOI器件，利用正背栅耦合效应，可通过施加背栅偏置电压补偿辐照导致的器件参数退化。本文研究了总剂量辐照对双埋氧层绝缘体上硅金属氧化物半导体场效应晶体管(DSOI MOSFET)总剂量损伤规律及背栅偏置调控规律，分析了辐射导致晶体管电参数退化机理，建立了DSOI晶体管总剂量效应模拟电路仿真器(SPICE)模型。模型仿真晶体管阈值电压与实测结果≤6 mV，同时根据总剂量效应模型给出了相应的背栅偏置补偿模型，通过晶体管背偏调控总剂量效应SPICE模型仿真输出的补偿电压与试验测试结果对比，N型金属氧化物半导体场效应晶体管(NMOSFET)的背偏调控模型误差为9.65%，P型金属氧化物半导体场效应晶体管(PMOSFET)为5.24%，该模型可以准确反映DSOI器件辐照前后阈值特性变化，为器件的背栅加固提供参考依据。

DSOI total dose-effect model and back-bias control model

The total dose damage to the Double buried oxide layer Silicon-On-Insulator silicon Metal Oxide Semiconductor Field Effect Transistor(DSOI MOSFET) is studied as well as the regulation of the back gate bias by the total dose radiation. The mechanism of the degradation of the electrical parameters of the transistor caused by the radiation is analyzed, and DSOI transistor total dose effect Simulation Program with Integrated Circuit Emphasis(SPICE) model is established. The model simulates the transistor threshold voltage, the simulated and measured results are below 6 mV. The corresponding back gate bias compensation model is given according to the total dose effect model. The SPICE model simulation output of the total dose effect is regulated by the transistor back bias. Comparing the compensation voltage with the experimental test results, the error of the back-bias control model of NMOSFET is 9.65%, and that of PMOSFET is 5.24%.