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Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets |
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| Authors: | L. G. Gerchikov Yu. A. Mamaev A. V. Subashiev Yu. P. Yashin D. A. Vasil’ev V. V. Kuz’michev A. E. Zhukov E. S. Semenova A. P. Vasil’ev V. M. Ustinov |
| Affiliation: | (1) St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
| Abstract: | Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices. |
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