Low-frequency noise behavior of 0.15-μm gate-lengthlattice-matched and lattice-mismatched MODFETs on InP substrates |
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| Authors: | Thurairaj M. Das M.B. Ballingall J.M. Ho P. Chao P.C. Kao M.-Y. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA; |
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| Abstract: | Experimental data are presented on equivalent gate noise voltage from 1 to 105 Hz obtained from lattice-matched and strained InGaAs quantum-well modulation-doped field effect transistors (MODFETs). In both types of devices excess generation-recombination (g-r) noise is observed at or below 100 Hz above an `apparent' background 1/f noise with spectral intensity ranging from 0.5×10-17 to 2×10-17 V2-Hz-1-cm2 at 1 Hz. These results are comparable to those reported by S.M.J. Liu et al. (1986) for the pseudomorphic MODFETs |
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