| 多晶硅高温压力传感器的芯片内温度补偿! |
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| 引用本文： | 庞科,张生才,姚素英,张为. 多晶硅高温压力传感器的芯片内温度补偿![J]. 传感技术学报, 2004, 17(1): 118-121 |
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| 作者姓名： | 庞科 张生才 姚素英 张为 |
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| 作者单位： | 天津大学,专用集成电路设计中心,天津,300072 |
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| 摘 要： | 提出了一种新的改善传感器温度特性的方法.通过在压力传感器芯片上集成多晶硅电阻网络与温度传感器,借助传感器信号处理单元,可以方便地实现对灵敏度系数的补偿.经过补偿,传感器的零点温漂达到1×10-4/℃,灵敏度温漂低于-2×10-4/℃.这种方法补偿的温区宽,具有很强的通用性,使高温压力传感器十分有效的温度补偿方法.
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| 关 键 词： | 多晶硅高温压力传感器 温度补偿 灵敏度 掺杂浓度 |
| 文章编号： | 1004-1699(2004)01-0118-04 |
| 修稿时间： | 2003-08-29 |
On-Chip Temperature Compensation Technology of High-Temperature Polysilicon Pressure Sensor |
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| PANG Ke,?? ZHANG Sheng??cai,YAO Su??ying,ZHANG Wei. On-Chip Temperature Compensation Technology of High-Temperature Polysilicon Pressure Sensor[J]. Journal of Transduction Technology, 2004, 17(1): 118-121 |
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| Authors: | PANG Ke ?? ZHANG Sheng??cai YAO Su??ying ZHANG Wei |
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| Affiliation: | ASIC Design Center of Tianjin Univ . , Tianjin 300072, China |
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| Abstract: | A new method to improve the temperature dependence of polycrystalline silicon pressure sensor is presented.By means of integrating polycrystalline silicon resistor network and a temperature sensor on chip, the temperature coeffi??cient of offset ( TCO) and sensitivity (TCS) of the sensor are effectively compensated to 1 ?? 10- 4 / and- 2 ?? 10- 4 / ,respectively. Showing advantages of wide compensating range and good compatibility, this method is a quite practical wayfor temperature compensation of the high temperature piezoresistive pressure sensor. |
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| Keywords: | high-temperature polycrystalline stalline silicon pressure sensor temperature independence sensitivity doping concentration |
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