| 超晶格电子辐照缺陷的亚稳态特性 |
| |
| 引用本文： | 封松林 周洁. 超晶格电子辐照缺陷的亚稳态特性[J]. 红外与毫米波学报, 1994, 13(3): 161-164 |
| |
| 作者姓名： | 封松林 周洁 |
| |
| 作者单位： | 中国科学院半导体研究所，半导体超晶格国家实验室 |
| |
| 摘 要： | 用深能级瞬态谱（ＤＬＴＳ）系统地研究了ＧａＡｓ（５０Ａ）／ＧａＡｌＡｓ（５０Ａ）起晶格中的电子辐照缺陷，证明其亚稳态特性的存在，对其恢复温度、转变条件进行了研究，指出在体材料中不能观察到电子辐照缺陷亚稳态的原因。
|
| 关 键 词： | 电子辐照缺陷 超晶格 亚稳态 |
METASTABLE CHARACTERISTICS OF ELECTRON IRRADIATION-INDUCED DEFECTS IN SUPERLATTICES |
| |
| Feng Songlin,Zhou Jie,Lu Liwu. METASTABLE CHARACTERISTICS OF ELECTRON IRRADIATION-INDUCED DEFECTS IN SUPERLATTICES[J]. Journal of Infrared and Millimeter Waves, 1994, 13(3): 161-164 |
| |
| Authors: | Feng Songlin Zhou Jie Lu Liwu |
| |
| Abstract: | Deep Level Transient Spectroscopy (DLTS) was used to study the irradiation-induced defects in GaAs (50A)/GaAlAs (50A) superlattice. The existence of metastability of such defects was demonstrated, and their transition temperature was studied. The reason why these characteristics can not be observed in the bulk materials is pointed out. |
| |
| Keywords: | electron irradiation-induced defects superlattices metastability DLTS. |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
