| CMOS／SIMOX器件总剂量辐照的研究 |
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| 引用本文： | 高剑侠,林成鲁.CMOS／SIMOX器件总剂量辐照的研究[J].固体电子学研究与进展,1995,15(1):61-65. |
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| 作者姓名： | 高剑侠 林成鲁 |
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| 作者单位： | 中国科学院新疆物理研究所,中国科学院上海冶金研究所,江苏石油化工学院 |
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| 摘 要： | 在新材料ＳＩＭＯＸ上制作ＣＭＯＳ器件,并采用静态Ｉ－Ｖ技术,研究了ＣＭＯＳ／ＳＩＭＯＸ在（６０）Ｃｏ－γ电离辐照场中辐照感生界面态、氧化物正电荷、阈值电压、静态漏电流等参数的变化。结果表明,在辐照过程中,氧化物正电荷增加较多,界面态增加较少,且ＮＭＯＳ和ＰＭＯＳ＂导通＂辐照偏置是最恶劣偏置。
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| 关 键 词： | 氧化物正电荷 界面态 阈电压 漏电流 |
Study of Total Dose Radiation on CMOS/SIMOX Device |
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| Gao Jianxia, Yan Rongliang, Yu Xufeng, Zhang Guoqiang, Ren Diyuan.Study of Total Dose Radiation on CMOS/SIMOX Device[J].Research & Progress of Solid State Electronics,1995,15(1):61-65. |
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| Authors: | Gao Jianxia Yan Rongliang Yu Xufeng Zhang Guoqiang Ren Diyuan |
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| Abstract: | CMOS was built on SIMOX material, and static I-V subthresholdtechnology was used to measure the oxide positive charge, interface state which induced by radiation in these devices, and the threshold voltage and leakage currentof devices after total dose radiation. The results indicate that the increase of oxidecharge density is more than that of interface state density during radiation, and the"on" irradiation bias is the worst bias for NMOSFET and PMOSFET. |
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| Keywords: | Oxide Positive Charge Interface State Threshold Voltage Leakage Current |
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