| 硅像素探测器读出芯片的设计 |
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| 引用本文： | 樊磊,魏微,王铮,刘湘,刘刚.硅像素探测器读出芯片的设计[J].原子能科学技术,2016,50(7):1296-1300. |
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| 作者姓名： | 樊磊 魏微 王铮 刘湘 刘刚 |
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| 作者单位： | 1.核探测与核电子学国家重点实验室，北京100049；2.中国科学院 高能物理研究所，北京 100049；3.中国科学院大学，北京100049 |
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| 基金项目： | 国家自然科学基金资助项目(1123501346) |
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| 摘 要： | 针对应用在高能物理实验的硅像素探测器，设计了一种基于时间过阈技术的像素阵列读出芯片。芯片采用商用的130 nm CMOS工艺进行流片，共有30×10个像素单元，像素单元的面积为50 μm×250 μm。测试结果表明，像素单元电路的等效噪声电荷低于100e-，积分非线性优于4.2%，基本实现了设计的功能。
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| 关 键 词： | 硅像素探测器 读出芯片 时间过阈技术 |
Design of Readout Chip for Silicon Pixel Detector |
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| FAN Lei,WEI Wei,WANG Zheng,LIU Xiang,LIU Gang.Design of Readout Chip for Silicon Pixel Detector[J].Atomic Energy Science and Technology,2016,50(7):1296-1300. |
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| Authors: | FAN Lei WEI Wei WANG Zheng LIU Xiang LIU Gang |
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| Affiliation: | 1.State Key Laboratory of Particle Detection and Electronics, Beijing 100049, China; 2.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China; 3.University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | A readout chip based on the time over threshold technology was designed for silicon pixel detector used in high energy physics experiment.The chip was taped out with a 130 nm CMOS technology.There are 30×10 pixel units in one chip,and the size of one pixel unit is 50 μm×250 μm.Test results show that the equivalent input noise of the pixel unit circuit is less than 100e- and the integral non-linearity is better than 4.2%.The basic functions are realized. |
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| Keywords: | silicon pixel detector readout chip time over threshold technology |
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