Structural and electrical properties of sol-gel synthesized PLZTthin films |
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| Authors: | Vijayaraghavan C. Goel T.C. Mendiratta R.G. |
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| Affiliation: | Dept. of Phys., Indian Inst. of Technol., New Delhi; |
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| Abstract: | Thin films of PLZT with PbTiO3 interlayers have been fabricated by using a sol-gel spin-on process. Three compositions of PLZT, namely 8/65/35, 15/40/60 and 18/30/70, have been deposited on platinum and quartz substrates and heat treated at 650°C. All three compositions have crystallized in the perovskite phase. The 8/65/35 composition, which has been investigated in greater detail exhibits a low value of leakage current. It also exhibits polarization hysteresis, with Ec=20 kV/cm and Pr=25 μC/cm2 |
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