| n型4H-SiC单晶生长工艺研究 |
| |
| 引用本文： | 侯晓蕊,王英民,李斌,戴鑫.n型4H-SiC单晶生长工艺研究[J].电子工艺技术,2014(4):237-238. |
| |
| 作者姓名： | 侯晓蕊 王英民 李斌 戴鑫 |
| |
| 作者单位： | 西北电子装备技术研究所,山西太原030024 |
| |
| 基金项目： | 国家国际科技合作基金项目（项目编号：2012DFR10450,2013DFR10020）. |
| |
| 摘 要： | 采用PVT法掺氮得到n型4H-SiC体单晶。研究了生长温度、冷却孔直径、掺氮量对晶体结晶质量的影响。实验结果表明:生长温度过低或过高会引入多型;冷却孔过大会使晶体产生较大的热应力,导致晶体开裂;掺入较多的氮使SiC晶格畸变。通过调整温场、优化掺氮工艺,获得了生长n型4H-SiC单晶的工艺条件,生长出结晶质量较好的n型4H-SiC单晶。
|
| 关 键 词： | n型H-SiC 生长温度 冷却孔直径 掺氮量 结晶质量 |
Research of n Type 4H-SiC Growth Process |
| |
| HOU Xiao-rui,WANG Ying-min,LI Bin,DAI Xin.Research of n Type 4H-SiC Growth Process[J].Electronics Process Technology,2014(4):237-238. |
| |
| Authors: | HOU Xiao-rui WANG Ying-min LI Bin DAI Xin |
| |
| Affiliation: | ( The Northwest Electronic Equipment Institute of Technology, Taiyuan 030024, China ) |
| |
| Abstract: | Nitrogen-doped 4H-SiC single crystals grown by physical vapor transport were investigated. Studied the effect of growth temperature, thermoscope hole diameter and concentration of N2 on Crystallinity. Experiments indicate that too high or too low growth temperature would lead to polytype. Large hole diameter would generated large thermal stress, which resulted in the crystal cracking. The incorporation of more nitrogen would cause lattice distortion. By adjusting the temperature field, optimizing process, obtaining good crystalline quality of n type 4H-SiC. |
| |
| Keywords: | n type 4H-SiC Growth temperature Thermoscope hole diameter Concentration of N2 Crystallinity |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
