等离子体刻蚀提纯冶金硅研究

通过自行设计的冷等离子体粉粒纯化系统,将硅粉撒进辉光放电区,以Ar气为反应气体,利用鞘层区域辉光放电的冷等离子体对硅粉料的作用,进行一系列的处理后,硅粉表面形貌平整度明显提高,纯度从98.75 9,6提高到99.56%.在此基础上,设计射频感应放电等离子体的振动倾斜反应室,经实验,将硅粉纯度提高到99.96 9,6,接近太阳级硅的要求,也为该研究未来的发展提供了新的思路和理论参考.

Study of metallurgical grade silicon purification by plasma etching

Under the Ar atmosphere,Si-particulate was spread into the glow discharging area through the system of cold plasma Si-particulate purification.After a series of treatments,the surface roughness was increased obviously,and the purity increase from 98.75% to 99.56%.Based on it,a vibrational synclinal chamber of RF Induction discharge plasma was design,and the purity can be increased to 99.96%,which is approached to the requirement of solar-grade silicon.It also provide a new thought for the future development...