Electroabsorption properties of InGaAs/InAlAs multiple quantum wellstructures at 1.5 μm |
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| Authors: | Chin M.K. Chang W.S.C. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA; |
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| Abstract: | The electroabsorption properties of InGaAs/InAlAs MQW structures are characterised in terms of Δα, Δα/F and Δα/α0, where Δα is the electroabsorption, α0 is the residual absorption coefficient under zero bias, and F is the applied electric field. The limitations of these structures for 1.5 μm modulators are primarily due to the relatively small Δα/F values as a result of the small well width. The results are compared with the literature |
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