| 掩模版雾状缺陷的解决方案 |
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| 引用本文： | 陈尧,黄其煜. 掩模版雾状缺陷的解决方案[J]. 半导体技术, 2008, 33(10) |
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| 作者姓名： | 陈尧 黄其煜 |
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| 作者单位： | 上海交通大学,微电子学院,上海200240;中芯国际集成电路制造(上海)有限公司,上海201203;上海交通大学,微电子学院,上海200240 |
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| 摘 要： | 在光刻波长进入到193 nm之后,雾状缺陷(haze defect)越发严重,研究发现环境是雾状缺陷产生的重要原因.目前晶圆厂主要采用改善掩模版工作环境和存储环境两种方式解决雾状缺陷,通过对这两种方案的对比表明,对掩模版的存储环境进行改善,可有效降低掩模版雾状缺陷的发生频率,提高掩模版的使用寿命,并且整体费用较低,是目前比较可行的方案,掩模版的无S化工艺也是未来发展方向.
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| 关 键 词： | 雾状缺陷 掩模版 存储环境 使用寿命 |
Solution for Mask Haze Defect |
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| Chen Yao,Huang Qiyu. Solution for Mask Haze Defect[J]. Semiconductor Technology, 2008, 33(10) |
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| Authors: | Chen Yao Huang Qiyu |
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| Affiliation: | Chen Yao1,2,Huang Qiyu1 (1.Microelectronic College,Shanghai Jiaotong University,Shanghai 200240,China,2.Semiconductor Manufacturing International(Shanghai) Corporation,Shanghai 201203,China) |
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| Abstract: | The haze defect shows more serious status during the lithography process coming to 193 nm wavelength.It has a large impact both to the mask lifetime and the wafer yield of the semiconductor production.The environment is an important factor to induce haze defect from the research of the haze theory.There are two major methods to solve the haze defect:one is mask working environment,the other is mask storage environment.The enhancement for the mask storage environment is more effective method to decrease the ... |
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| Keywords: | haze defect mask storage environment lifetime |
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