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A new model for bipolar transistors at high current |
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| Authors: | Gu R.X. Elmasry M.I. Roulston D.J. |
| Affiliation: | Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.; |
| Abstract: | A model for current gain and cutoff frequency falloff at high currents for bipolar transistors is proposed. The model is based on considering that the vertical and lateral base widening occur simultaneously for a typical bipolar transistor. The results of this model successfully fit Pisces-2B simulation results |
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