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Effect of electronic structures on electrochemical behaviors of surface-terminated boron-doped diamond film electrodes
Affiliation:State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, PR China;Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing, 100084, PR China
Abstract:In order to analyze the electrochemical behaviors of hydrogen-terminated and oxygen-terminated boron-doped diamond film electrodes, experiments of the cyclic voltammetry and AC impedance spectroscopy have been performed. For the purpose of clarifying the detailed electronic structures of these diamond films, current–voltage spectroscopy curves and XPS spectra have been investigated by scanning probe microscopy and X-ray photoelectron spectroscopy, respectively. For the hydrogen-terminated boron-doped diamond film electrode, its potential window is narrower than that of the oxygen-terminated boron-doped diamond. The impedance results indicate that the diamond film resistances and capacitances corresponding to different surface-terminated boron-doped diamond electrodes vary significantly. The surface band gap of hydrogen-terminated diamond film is narrow with empty surface states in it. In contrast, the surface band gap of oxygen-terminated diamond film is wide and clean. Compared with hydrogen-terminated diamond film, the surface energy bands of oxygen-terminated diamond film bend downwards. Based on their electronic structures, the electrochemical behaviors of the two boron-doped diamond film electrodes have been discussed.
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