Direct synthesis of SiC nanowires by multiple reaction VS growth

β-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10–30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO₂ composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires.