Low-temperature CVD growth of carbon nanotubes for field emission application |
| |
| Affiliation: | 1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C.;2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300, R.O.C.;3. Material & Chemical Research Laboratories (MCL), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, 310, R.O.C.;4. Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, 310, R.O.C. |
| |
| Abstract: | For field emission application, carbon nanotube emitters were synthesized on catalyst-mixed thick-film electrode lower than 500 °C by chemical vapor deposition (CVD) method. Mixtures of Ni/tetraethyl silicate (TEOS) and conducting Ag powders were applied to fabricate the electrode by screen-printing processes. These processes are simple, low cost and easy to scale up for large sized panels. The field emission properties performed uniform emission image and high brightness (no less than 500 nits). The turn-on electric field was about 3.85 V/μm with an emission current destiny of 10 μA/cm2, and the achieved current density was 1 mA/cm2 driven by 5 V/μm. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
