The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond |
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| Affiliation: | Technological Institute for Superhard and Novel Carbon Materials, Centralnaya Street 7a, 142190, Troitsk, Moscow Region, Russian Federation;Cambridge University, UK;Waseda University, Japan;Ulm University, Germany;North Carolina State University, USA |
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| Abstract: | Type IIb diamond single crystals of size up to 8 mm were grown using the temperature-gradient method at high static pressure and temperature in Fe–Al–C system with added boron. The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors has been investigated using optical techniques. Variation from cubo-octahedral to octahedral habit with an increasing added amount of boron has been noted and explained. |
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