Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy

It is shown that the photonic crystal slab (PCS) with hexagonal air holes has band gaps in the guided mode spectrum, which can be compared to that of the PCS with circular air holes, thus it is also a good candidate to be used for the PC devices. The PC with hexagonal air holes and a = 0.5 μm and r = 0.15 μm was fabricated successfully by selective area metal organic vapor phase epitaxy (SA-MOVPE). The vertical and smooth sidewalls are formed and the uniformity is very good. The same process was also used to fabricate a hexagonal air hole array with the width of 0.1 μm successfully. The air-bridge PCS with hexagonal air holes and a = 0.3 μm and r = 0.09 μm was also fabricated successfully by SA-MOVPE. Further optimization of the growth conditions for the sacrificial layer and the selective etching of the GaAs cap layer is also needed. Our experimental results indicate that SA-MOVPE is a promising method for fabricating PC devices and photonic nanostructures.