Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy |
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| Affiliation: | 1. Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Ecole Supérieure d''Electricité, Universités Paris VI et Paris XI, 11 rue Joliot-Curie Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France;2. Optical Sensor Group, National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan |
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| Abstract: | Local photoconductivity characterizations have been carried out on planar interdigitated metal-semiconductor-metal (MSM) devices fabricated on homoepitaxial CVD diamond for UV application. For this purpose a deuterium light source with an integrated UV fibre was combined and adapted to a conducting probe atomic force microscope (CP-AFM) tool. In this study, photocurrent was evidenced by local electrical resistance mapping measurements and analyzed as a function of the applied voltage and time. |
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