| Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS |
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| 引用本文： | Sun Weifeng,Yi Yangbo,Lu Shengli,Shi Longxing. Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS[J]. 半导体学报, 2006, 27(6): 976-981 |
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| 作者姓名： | Sun Weifeng Yi Yangbo Lu Shengli Shi Longxing |
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| 作者单位： | 东南大学国家ASIC系统工程技术研究中心，南京 210096;东南大学国家ASIC系统工程技术研究中心，南京 210096;东南大学国家ASIC系统工程技术研究中心，南京 210096;东南大学国家ASIC系统工程技术研究中心，南京 210096 |
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| 基金项目： | 国家科技攻关项目 , 江苏省研究生培养创新工程项目 , 东南大学校科研和教改项目 |
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| 摘 要： | 提出了体硅LDMOS漂移区杂质浓度分布的一种二维理论模型,根据该模型,如果要使带有场极板的LDMOS得到最佳的性能,那么LDMOS漂移区的杂质浓度必须呈分段线性分布.用半导体专业软件Tsuprem-4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LDMOS增加58.8%和降低87.4%.
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| 关 键 词： | 击穿电压 导通电阻 分段线性 breakdown voltage specific on-resistance piecewise linearly graded doping drift region 体硅 LDMOS 漂移区 分段线性 注入 模型 研究 Region Drift Doping Piecewise Model results process device simulator conventional specific breakdown voltage doping profile |
| 文章编号： | 0253-4177(2006)06-0976-06 |
| 收稿时间： | 2006-01-18 |
| 修稿时间： | 2006-03-02 |
Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS |
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| Sun Weifeng,Yi Yangbo,Lu Shengli and Shi Longxing. Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS[J]. Chinese Journal of Semiconductors, 2006, 27(6): 976-981 |
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| Authors: | Sun Weifeng Yi Yangbo Lu Shengli Shi Longxing |
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| Affiliation: | National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China |
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| Abstract: | A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed.According to the proposed model,to obtain good performance,the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded.The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58.8%,and the specific on-resistance is reduced by 87.4% compared with conventional LDMOS.These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici. |
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| Keywords: | breakdown voltage specific on-resistance piecewise linearly graded doping drift region |
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