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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition |
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| Authors: | Jiran Liang Ming Hu Qiang Kan Xiuqin Liang Xiaodong Wang Guike Li Hongda Chen |
| Affiliation: | 1. School of Electronic and Information Technology, Tianjin University, Tianjin 300072, China ;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2. School of Electronic and Information Technology, Tianjin University, Tianjin 300072, China 3. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 4. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 5. State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray dif- fraction (XRD), atom force microscopy (AFM), and Fourier transform infrared spectrum (FTIR) were employed to measure the crystalline structure, surface morphology, and infrared opdcal transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO<,2>, with preferred orientation of (011). The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80℃. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same tempera- ture across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect. |
| Keywords: | vanadium dioxide infrared transition diffraction effect dual ion beam sputtering annealing |
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