| 超深亚微米SOINMOSFET中子辐照效应数值模拟 |
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| 引用本文： | 胡志良,贺朝会,张国和,郭达禧.超深亚微米SOINMOSFET中子辐照效应数值模拟[J].原子能科学技术,2011,45(4):456-460. |
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| 作者姓名： | 胡志良 贺朝会 张国和 郭达禧 |
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| 作者单位： | 西安交通大学 ;能源与动力工程学院，陕西 ;西安710049 |
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| 摘 要： | 考虑3种特征尺寸的超深亚微米SOINMOSFET的中子辐照效应。分析了中子位移辐照损伤机理，数值模拟了3种器件输出特性曲线随能量为1MeV的等效中子在不同辐照注量下的变化关系及中子辐照环境下器件工艺参数对超深亚微米SOINMOSFET的影响。数值模拟部分结果与反应堆中子辐照实验结果一致。
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| 关 键 词： | 中子辐照 超深亚微米 SOINMOSFET 数值模拟 |
Simulation for Neutron Radiation Effects on Super Deep Submicron SOI NMOSFET |
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| HU Zhi-liang,HE Chao-hui,ZHANG Guo-he,GUO Da-xi.Simulation for Neutron Radiation Effects on Super Deep Submicron SOI NMOSFET[J].Atomic Energy Science and Technology,2011,45(4):456-460. |
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| Authors: | HU Zhi-liang HE Chao-hui ZHANG Guo-he GUO Da-xi |
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| Affiliation: | School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049, China |
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| Abstract: | The neutron radiation effects on three different sizes of super deep submicron SOI NMOSFET (0.25 μm, 0.18 μm and 0.09 μm) were studied. The mechanisms of neutron radiation damage were analyzed. The output characteristic parameters of the three types of devices changing with different 1 MeV equivalent neutron fluences and the influence of the process parameters of the devices on neutron radiation damage were simulated. The results of simulation and experiment agree well. |
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| Keywords: | neutron radiation super deep submicron SOI NMOSFET numerical simulation |
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