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Flicker noise in silicon planar transistors |
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| Authors: | Faulkner EA Harding DW |
| Affiliation: | University of Reading, J.J. Thomson Physical Laboratory, Reading, UK; |
| Abstract: | Flicker noise may be characterised by a single parameter ?F, which is the frequency at which flicker noise becomes equal to shot noise. Many devices show ?F to be as low as 60 Hz, and give a noise figure of <1dB at 25 Hz. This is not in accordance with a recently published formula. |
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