| 离子辅助沉积掺铝氧化锌透明导电膜的研究 |
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| 引用本文： | 初国强,王子君,刘星元,王立军. 离子辅助沉积掺铝氧化锌透明导电膜的研究[J]. 液晶与显示, 2001, 16(2): 135-139 |
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| 作者姓名： | 初国强 王子君 刘星元 王立军 |
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| 作者单位： | 中国科学院 激发态物理开放研究实验室， 吉林 长春 130021;中国科学院 长春光学精密机械与物理研究所， 吉林 长春 130022 |
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| 基金项目： | 中国科学院“九五”重大资助项目；高等学校重点实验室访问学者基金资助项目 |
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| 摘 要： | 报道了采用离子辅助电子枪蒸发技术制备优质氧化锌透明导电膜的工艺和结果，分析了源掺杂，镀膜气氛，衬底温度等参数与膜的电导率及透光特性的关系，作出了电阻率低达2×10
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| 关 键 词： | 氧化锌透明导电膜 离子辅助蒸发 电子束蒸发 氧化物半导体 电导率 透光特性 源参杂 镀膜气氛 |
| 文章编号： | 1007-2780(2001)02-0135-05 |
| 修稿时间： | 2000-12-15 |
High Quality Zinc OxideTransparent Conductive Films by E-IAD |
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| CHU Guo qiang,WANG Zi jun,LIU Xing yuan,WANG Li jun. High Quality Zinc OxideTransparent Conductive Films by E-IAD[J]. Chinese Journal of Liquid Crystals and Displays, 2001, 16(2): 135-139 |
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| Authors: | CHU Guo qiang WANG Zi jun LIU Xing yuan WANG Li jun |
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| Abstract: | The processing technology and the results of high quality ZnO thin solid films prepared by active electron beam evaporation with IAD are reported. The typical properties of the film are as followings: The resistivity is as low as 2×10-3Ω*cm. The sheet resistance of the film with thickness of 4×10-8cm is 1000Ω/□, and the average transparence for visible light is higher than 80%. The dependence of the films on doping of the source, atmosphere of the evaporating chamber, substrate temperature, etc. is analysed as well. The experimental results show that the ion assistant deposition(IAD) plays an important role in processing AZO film |
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| Keywords: | zinc oxide transparent conductive film IAD electron beam evaporation oxide semiconductor |
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