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Calculating the extended defect contrast for the X-ray-beam-induced current method |
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| Authors: | Ya. L. Shabel’nikova E. B. Yakimov M. V. Grigor’ev R. R. Fahrtdinov V. A. Bushuev |
| Affiliation: | 1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia 2. Moscow State University, Moscow, 119991, Russia |
| Abstract: | The contrast of extended defects representing dislocations and grain boundaries has been calculated for the X-ray-beam-induced current (XBIC) method. It is established that the maximum contrast increases with the diffusion length of excess charge and decreases with increasing X-ray beam width. The simulated XBIC profile contrasts are compared to experimentally measured patterns. |
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