The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes |
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Authors: | Ya. Ya. Kudryk A. V. Zinovchuk |
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Affiliation: | 1. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03025, Kiev, Ukraine 2. Ivan Franko Zhytomyr State University, 10008, Zhytomyr, Ukraine
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Abstract: | The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-emitting diodes (LEDs) operating in the middle-infrared (mid-IR) range (?? = 3?5 ??m) has been studied. Calculations based on a modified model of recombination coefficients show that current crowding leads to a significant decrease in the IQE of LEDs, which is especially pronounced in longer-wavelength devices (23% at ?? = 3.4 ??m versus 39% at ?? = 4.2 ??m). The obtained results indicate that the effect of current crowding should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR LEDs. |
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