首页 | 本学科首页   官方微博 | 高级检索  
     


Electron Transport Through Coupled Quantum Dots Below the Kondo Temperature
Authors:Tomosuke Aono and Mikio Eto
Affiliation:(1) The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-Shi, Saitama, 351-0198, Japan;(2) Department of Physics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan;(3) Department of Applied Physics/DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
Abstract:Conductance G, through coupled quantum dots in series isinvestigated below the Kondo temperature, based on the slaveboson formalism of the Anderson model with theantiferromagnetic spin–spin coupling J. Electron transport ischaracterized by the ratio of the dot–dot tunneling couplingVC to the level broadening in the dots Delta(dot-lead coupling). When VC/Delta<1, the Kondoresonance is formed in each dot and lead and G is determinedby hopping between the two Kondo states. They are replaced bya spin-singlet state in the dots for low gate voltages. Thegate voltage dependence of G has a sharp peak of 2e2/h inheight in the crossover region between the spin-singlet andKondo states. When Vc/Delta>1, the Kondo levelsare split below and above the Fermi level in the leads for lowgate voltages. The gate voltage dependence of G has a broadpeak, which is fairly robust against J. This broad peak isdivided into two peaks when the energy levels are differentbetween the dots.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号