Electron Transport Through Coupled Quantum Dots Below the Kondo Temperature |
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Authors: | Tomosuke Aono and Mikio Eto |
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Affiliation: | (1) The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-Shi, Saitama, 351-0198, Japan;(2) Department of Physics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan;(3) Department of Applied Physics/DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands |
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Abstract: | Conductance G, through coupled quantum dots in series isinvestigated below the Kondo temperature, based on the slaveboson formalism of the Anderson model with theantiferromagnetic spin–spin coupling J. Electron transport ischaracterized by the ratio of the dot–dot tunneling couplingVC to the level broadening in the dots (dot-lead coupling). When VC/<1, the Kondoresonance is formed in each dot and lead and G is determinedby hopping between the two Kondo states. They are replaced bya spin-singlet state in the dots for low gate voltages. Thegate voltage dependence of G has a sharp peak of 2e2/h inheight in the crossover region between the spin-singlet andKondo states. When Vc/>1, the Kondo levelsare split below and above the Fermi level in the leads for lowgate voltages. The gate voltage dependence of G has a broadpeak, which is fairly robust against J. This broad peak isdivided into two peaks when the energy levels are differentbetween the dots. |
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