Sensing mechanism of hydrogen gas sensor based on RF-sputtered ZnO thin films |
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Authors: | NH Al-Hardan MJ AbdullahA Abdul Aziz |
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Affiliation: | School of Physics, Universiti Sains Malaysia,11800 Penang, Malaysia |
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Abstract: | The mechanism of hydrogen (H2) gas sensing in the range of 200–1000 ppm of RF-sputtered ZnO films was studied. The I–V characteristics as a function of operating temperature proved the ohmic behaviour of the contacts to the sensor. The complex impedance spectrum (IS) of the ZnO films showed a single semicircle with shrinkage in the diameter as the temperature increased. The best fitting of these data proved that the device structure can be modelled as a single resistance-capacitance equivalent circuit. It was suggested that the conductivity mechanism in the ZnO sensor is controlled by surface reaction. The impedance spectrum also exhibited a decreased in semicircle radius as the hydrogen concentration was increased in the range from 200 ppm to 1000 ppm. |
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Keywords: | Hydrogen sensors ZnO films Impedance spectroscopy |
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