Ultra-high-speed InP/InGaAs heterojunction bipolar transistors |
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| Authors: | Jong-In Song Hong B.W.-P. Palmstrom C.J. Van Der Gaag B.P. Chough K.B. |
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| Affiliation: | Bellcore, Red Bank, NJ; |
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| Abstract: | We report on the microwave performance of InP/In0.53Ga 0.47As heterojunction bipolar transistors (HBT's) utilizing a carbon-doped base grown by chemical beam epitaxy (CBE). The fT and fmax of the HBT having two 1.5×10 μm2 emitter fingers were 175 GHz and 70 GHz, respectively, at IC=40 mA and VCE=1.5 V. To our knowledge, the f T of this device is the highest of any type of bipolar transistors yet reported. These results indicate the great potential of carbon-doped base InP/InGaAs HBT's for high-speed applications |
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