Characteristics of a grating-external-cavity semiconductor lasercontaining intracavity prism beam expanders |
| |
Authors: | Zorabedian P |
| |
Affiliation: | Hewlett-Packard Lab., Palo Alto, CA; |
| |
Abstract: | A grating tuned external cavity semiconductor laser incorporating a gradient-index rod lens and a pair of intracavity silicon prism beam expanders was constructed using a configuration aimed at simultaneously achieving the following objectives: the ability to operate at any external cavity longitudinal mode without tuning gaps caused by residual resonances of the laser diode cavity, stable feedback coupling between the diode and external cavities, narrow optical linewidth, and a high degree of external cavity longitudinal sidemode suppression |
| |
Keywords: | |
|
|