A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO insilicon on anything |
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| Authors: | Baltus P.G.M. Wagemans A.G. Dekker R. Hoogstraate A. Maas H. Tombeur A. van Sinderen J. |
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| Affiliation: | Philips Res. Lab., Eindhoven; |
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| Abstract: | In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits |
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