Film-level hybrid integration of AlGaAs laser diode with glasswaveguide on Si substrate |
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| Authors: | Yanagisawa M. Terui H. Shuto K. Miya T. Kobayashi M. |
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| Affiliation: | NTT Opto-electron. Lab., Ibaraki; |
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| Abstract: | A ridge-waveguide AlGaAs laser diode (LD) was integrated with a SiO2-Ta2O5 embedded waveguide on a Si substrate by using a film-level hybrid integration technique of semiconductor epitaxial film. CW operation of the LD was achieved at room temperature. The LD-waveguide butt-coupling loss was 9 dB, and the loss due to misalignment was estimated at 3 dB, which corresponds to a displacement of about 1 μm in both the vertical and lateral directions |
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