Studies of yttrium oxide films prepared by RF magnetron sputtering |
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| Authors: | Yip L.S. Shih I. |
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| Affiliation: | Dept. of Electr. Eng., McGill Univ., Montreal, Que.; |
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| Abstract: | Films of yttrium oxide (Y2O3) were deposited on Si substrates from a Y2O3 target by RF magnetron sputtering. MIS capacitors in the form of Al and Y2O3 (400 Å)-Si were then fabricated. The leakage current density was about 10-6 A/cm2 at 1.3×106 V/cm, and the breakdown field of the films was about 2.75×106 V/cm. The dielectric constant of the sputtered Y2O3 was found to be about 12-12.7 |
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