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Sputtering and surface state evolution of Bi under oblique incidence of 120 keV Ar ions |
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| Authors: | S MammeriS Ouichaoui H AmmiH Hammoudi CA Pineda-Vargas |
| Affiliation: | a CRNA, B.P. 399, 02 Bd. Frantz Fanon, Alger-Gare, Algiers, Algeria b Université des Sciences et de la Technologie Houari Boumediène (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers, Algeria c iThemba Labs, MRG, P.O. Box 722, Somerset West, Cape Town 7129, South Africa |
| Abstract: | The sputtering and surface state evolution of Bi/Si targets under oblique incidence of 120 keV Ar+ ions have been investigated over the range of incidence angles 0° ? θi ? 60°. Increasing erosion of irradiated samples (whose surface thickness reduced by ∼3% at normal incidence up to ∼8% at θ = 60°) and their surface smoothing with reducing grain sizing were pointed out using Rutherford backscattering (RBS), atomic force (AFM) and X-ray diffraction (XRD) techniques. Measured sputtering yield data versus θi with fixed ion fluence to ∼1.5 × 1015 cm−2 are well described by Yamamura et al. semi-empirical formula and Monte Carlo (MC) simulation using the SRIM-2008 computer code. The observed increase in sputter yield versus incidence angle is closely correlated to Bi surface topography and crystalline structure changes under ion irradiation. |
| Keywords: | Sputtering yields Rutherford backscattering spectrometry Atomic force microscopy X-ray diffraction spectroscopy |
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