Precipitates and defects in silicon co-implanted with helium and oxygen |
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| Authors: | BS Li CH ZhangHH Zhang Y ZhangYT Yang LQ Zhang |
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| Affiliation: | a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China
b Jiangxi Key Laboratory of Surface and Engineering, Jiangxi Science and Technology Normal University, Nanchang 330013, PR China |
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| Abstract: | Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitates formed in the initial stage of the separation-by-implanted-oxygen process are related to the size and density of He-induced vacancy-type defects (nano-bubbles and voids). A high density of nano-bubbles is more efficient in gettering than that of a low density of voids. |
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| Keywords: | Ion implantation SIMOX Vacancy-type defects Precipitates TEM |
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