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Anisotropic rearrangement of the substrate atoms during Ar bombardment on Pd(0 0 1) surface
Authors:Sang-Pil Kim  Byung-Hyun Kim  Haeri Kim  Kwang-Ryeol Lee  Yong-Chae ChungJikeun Seo  Jae-Sung Kim
Affiliation:a Computational Science Center, Interdisciplinary Fusion Technology Division, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
b Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
c Department of Physics, Ewha Womans University, Seoul 120-750, Republic of Korea
d Department of Ophthalmic Optics, Chodang University, Muan 534-701, Republic of Korea
e Department of Physics, Sookmyung Women’s University, Seoul 140-742, Republic of Korea
Abstract:Using a three-dimensional molecular dynamics (MD) simulation, we investigated the atomic scale rearrangement that occurs on a Pd(0 0 1) surface after energetic bombardment by Ar at room temperature. High energy Ar bombardment provoked the significant rearrangement of Pd atoms in a ballistic manner with a fourfold symmetric lateral distribution aligned along the 〈1 1 0〉 direction. The MD simulation of uniform Ar bombardment at normal incidence on a Pd surface reproduced the experimentally observed fourfold symmetric nano-scale surface structure. The present result supports that the ballistic rearrangement of the substrate atoms plays an important role in the ion induced surface structure evolution.
Keywords:Cascade induced rearrangement   MD simulation   Pd(0     1) surface   Surface nanostructuring
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